DEEP REACTIVE ION ETCHING OF SINGLE CRYSTAL 4H-SIC

Synopsis:

NASA/NSSC has a requirement for Deep Reactive Ion Etching of Single Crystal 4H-SiC. 

NASA/NSSC intends to issue a sole source contract to BIOTRONICS, INC 24831 Lorain RD STE 203 North Olmsted, Ohio 44070-2082 United States under the authority of FAR 13.106-1(b)(1)(i). It has been determined that BIOTRONICS, INC is the sole provider of Deep Reactive Ion Etching of Single Crystal 4H-SiC.

NASA/NSSC will be the procuring center for this effort.  Performance will be located at NASA/ Glenn Research Center (GRC).

The Government intends to acquire commercial items and services using the provisions, clauses and procedures prescribed in FAR Part 12 and FAR Part 13.

The NAICS Code for this procurement is 334513.

Interested organizations may submit their capabilities and qualifications to perform the effort in writing to the identified point of contact not later than 4:00 p.m. Central Standard Time on 12/22/2025. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether or not to conduct this procurement on a competitive basis. A determination by the Government not to compete this proposed effort on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the government.

Oral communications are not acceptable in response to this notice.

NASA Clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at http://prod.nais.nasa.gov/pub/pub_library/Omb.html .

Primary Point of Contact:

Laura Quave

Procurement Specialist

laura.a.quave@nasa.gov

228-813-6420