Closed Solicitation · NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

    GALLIUM NITRIDE DIODE WAFER FABRICATION

    NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
    Sol. 80GRC025CA030Special Notice
    Closed
    STATUS
    Closed
    closed Aug 20, 2025
    POSTED
    Aug 13, 2025
    Publication date
    NAICS CODE
    334413
    Primary industry classification
    PSC CODE
    5961
    Product & service classification

    AI Summary

    NASA Glenn Research Center requires a dedicated Gallium Nitride wafer fabrication run to produce 7000 high-performance Schottky diodes for high-frequency applications. The devices must meet specific performance criteria and be available in the vendor's catalog. NASA intends to issue a sole source contract to Raytheon Advanced Technologies. Interested organizations may submit their qualifications by August 20, 2025.

    Contract details

    Solicitation No.
    80GRC025CA030
    Notice Type
    Special Notice
    Posted Date
    August 13, 2025
    Response Deadline
    August 20, 2025
    NAICS Code
    334413AI guide
    PSC / Class Code
    5961
    Primary Contact
    Ian Park
    AI Product/Service
    product

    Description

    NASA Glenn Research Center (GRC) has a requirement for a dedicated Gallium Nitride wafer fabrication run to provide 7000 high performance Schottky diodes for integration in high power Rectenna arrays operating at 10 GHz and above.  These diodes must meet highly specific qualifications and produce cutting edge performance to enable high-frequency, high-power and high-efficiency power rectification.  The device performance requirements outlined in the Statement of Work include global cut-off frequency, return loss, junction capacitance, operational power handling, current handling, and high-temperature operation.  These devices must already exist in the vendors catalog and device measurements meeting the SOW requirements must be currently available or else it wouldn’t be possible to expect a competitor to deliver these devices with the stated performance within the required time frame.

    NASA GRC intends to issue a sole source contract to acquire the related capabilities as outlined in the attached Statement of Work from Raytheon Advanced Technologies of Tewksbury, MA under the authority of FAR 6.302-1, only one responsible source and no other supplies or services will satisfy agency requirements.

    The Government does intend to acquire a commercial product or commercial service using FAR Part 12.

    Interested organizations may submit their capabilities and qualifications to perform the effort electronically via email to Ian Park (ian.park@nasa.gov) not later than 12:00pm ET on August 20, 2025. Such capabilities/qualifications will be evaluated solely for the purpose of determining whether to conduct this acquisition on a competitive basis. A determination by the Government not to compete this acquisition on a full and open competition basis, based upon responses to this notice, is solely within the discretion of the Government.

    NASA Clause 1852.215-84, Ombudsman, is applicable. The Center Ombudsman for this acquisition can be found at : https://www.hq.nasa.gov/office/procurement/regs/Procurement-Ombuds-Comp-Advocate-Listing.pdf

    Key dates

    1. August 13, 2025Posted Date
    2. August 20, 2025Proposals / Responses Due

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    Frequently asked questions

    GALLIUM NITRIDE DIODE WAFER FABRICATION is a federal acquisition solicitation issued by NATIONAL AERONAUTICS AND SPACE ADMINISTRATION. Review the full description, attachments, and submission requirements on SamSearch before the response deadline.

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